BC817SU
NPN Silicon AF Transistor
• For general AF applications
4
• High collector current
3
5
2
6
• High current gain
1
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
BC817SU
B6s
Pin Configuration
1=E
2=C
3=C
4=C
Package
5=C
6=B
SC74
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCEO
45
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
5
Collector current
IC
Peak collector current, tp ≤ 10 ms
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
1000
500
1
Unit
V
mA
A
mA
mW
TS ≤ 100°C
Junction temperature
Tj
Storage temperature
Tstg
150
°C
-65 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
≤ 50
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-08-30
BC817SU
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
45
-
-
V(BR)CBO
50
-
-
V(BR)EBO
5
-
-
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 25 V, IE = 0
-
-
0.1
VCB = 25 V, IE = 0 , TA = 150 °C
-
-
50
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
hFE
IC = 100 mA, VCE = 1 V
160
250
400
IC = 500 mA, VCE = 1 V
40
-
-
VCEsat
-
-
0.4
VBEsat
-
-
1.2
fT
-
170
-
MHz
Ccb
-
3
-
pF
Ceb
-
40
-
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
f = 1 MHz, VBE = 10 V
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2011-08-30
BC817SU
DC current gain hFE = ƒ(IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
10 3
0.4
Hfe
Uce
V
10 2
150 °C
25 °C
- 50 °C
0.2
125 °C
85 °C
25 °C
- 40 °C
0.1
10 1 -5
10
10
-4
10
-3
10
-2
10
-1
A 10
0 -4
10
0
10
-3
10
-2
10
-1
A
Ic
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
IC = (VBEsat), hFE = 10
10 5
1.5
V
Ι CBO
Ube
0.9
BC 817/818
EHP00221
nA
10 4
1.2
1
0
Ic
Base-emitter saturation voltage
1.1
10
150 °C
25 °C
- 50 °C
max
10 3
0.8
0.7
typ
10 2
0.6
0.5
0.4
10 1
0.3
0.2
0.1
0 -4
10
10
-3
10
-2
10
-1
A
10
10 0
0
Ic
0
50
100
˚C
150
TA
3
2011-08-30
BC817SU
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 3
EHP00218
1200
MHz
mW
5
Ptot
fT
BC 817/818
Total power dissipation P tot = ƒ(TS)
10 2
800
600
5
400
200
10 1
10 0
10 1
10 2
mA
0
0
10 3
°C
50
150
ΙC
TS
Permissible Pulse Load RthJS = ƒ(tp)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 3
10 3
P totmax/PtotDC
-
RthJS
10 2
10 1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
10 0 -6
10
0
TP
10
-5
10
-4
10
-3
10
-2
s
10
0
TP
4
2011-08-30
Package SC74
BC817SU
Package Outline
B
1.1 MAX.
1
2
3
0.35 +0.1
-0.05
Pin 1
marking
0.2
B 6x
M
A
0.1 MAX.
0.95
0.2
1.9
1.6 ±0.1
4
10˚ MAX.
5
2.5 ±0.1
6
0.25 ±0.1
0.15 +0.1
-0.06
(0.35)
10˚ MAX.
2.9 ±0.2
(2.25)
M
A
Foot Print
2.9
1.9
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.7
8
4
Pin 1
marking
3.15
1.15
5
2011-08-30
BC817SU
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-08-30
很抱歉,暂时无法提供与“BC 817SU E6327”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+6.75052
- 25+2.92200
- 100+1.61062